[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement
S. Inumiya1, A. Kaneko1, K. Nagatomo1, M. Goto1, K. Tatsumura1, I. Hirano1, S. Kawanaka1, A. Azuma1, K. Nakajima1, T. Aoyama1, K. Eguchi1, A. Nishiyama1, Y. Toyoshima1, Y. Tsunashima1
(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.B-4-4