Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya; A. Kaneko; K. Nagatomo; M. Goto; K. Tatsumura; I. Hirano; S. Kawanaka; A. Azuma; K. Nakajima; T. Aoyama; K. Eguchi; A. Nishiyama; Y. Toyoshima; Y. Tsunashima

doi:https://doi.org/10.7567/SSDM.2009.B-4-4

[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya¹, A. Kaneko¹, K. Nagatomo¹, M. Goto¹, K. Tatsumura¹, I. Hirano¹, S. Kawanaka¹, A. Azuma¹, K. Nakajima¹, T. Aoyama¹, K. Eguchi¹, A. Nishiyama¹, Y. Toyoshima¹, Y. Tsunashima¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-4-4

2009 International Conference on Solid State Devices and Materials

[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement