The Japan Society of Applied Physics

[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya1、A. Kaneko1、K. Nagatomo1、M. Goto1、K. Tatsumura1、I. Hirano1、S. Kawanaka1、A. Azuma1、K. Nakajima1、T. Aoyama1、K. Eguchi1、A. Nishiyama1、Y. Toyoshima1、Y. Tsunashima1 (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-4-4