[B-4-4] Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

S. Inumiya¹、A. Kaneko¹、K. Nagatomo¹、M. Goto¹、K. Tatsumura¹、I. Hirano¹、S. Kawanaka¹、A. Azuma¹、K. Nakajima¹、T. Aoyama¹、K. Eguchi¹、A. Nishiyama¹、Y. Toyoshima¹、Y. Tsunashima¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-4-4