Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei; D. Kosemura; K. Nagata; H. Akamatsu; S. Mayuzumi; S. Yamakawa; H. Wakabayashi; A. Ogura

doi:https://doi.org/10.7567/SSDM.2009.B-5-1

[B-5-1] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei¹, D. Kosemura¹, K. Nagata¹, H. Akamatsu¹, S. Mayuzumi^1,2, S. Yamakawa², H. Wakabayashi², A. Ogura¹ (1.Meiji Univ.(Japan), 2.Sony Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-5-1

2009 International Conference on Solid State Devices and Materials

[B-5-1] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy