[B-5-1] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei¹、D. Kosemura¹、K. Nagata¹、H. Akamatsu¹、S. Mayuzumi^1,2、S. Yamakawa²、H. Wakabayashi²、A. Ogura¹ (1.Meiji Univ.(Japan)、2.Sony Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-5-1