[B-5-4] Influence of Gate Electrode Stress on Channel Stress and Device Performance in Gate-First W/TiN Gate MOSFETs

T. Matsuki¹、J. Yugami¹、T. Eimori¹、Y. Nara¹、K. Ikeda¹ (1.Selete)

https://doi.org/10.7567/SSDM.2009.B-5-4