2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[B-5-4] Influence of Gate Electrode Stress on Channel Stress and Device Performance in Gate-First W/TiN Gate MOSFETs

T. Matsuki¹, J. Yugami¹, T. Eimori¹, Y. Nara¹, K. Ikeda¹ (1.Selete)

https://doi.org/10.7567/SSDM.2009.B-5-4

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