[B-7-1] High Electron Mobility Ge n-Channel MOSFETs with GeO₂ grown by High Pressure Oxidation

C. H. Lee¹, T. Nishimura^1,2, T. Tabata^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo(Japan), 2.CREST-JST(Japan))

https://doi.org/10.7567/SSDM.2009.B-7-1