[B-7-1] High Electron Mobility Ge n-Channel MOSFETs with GeO₂ grown by High Pressure Oxidation

C. H. Lee¹、T. Nishimura^1,2、T. Tabata^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo(Japan)、2.CREST-JST(Japan))

https://doi.org/10.7567/SSDM.2009.B-7-1