[B-7-4] Effects of MIS Interfacial Layers on Interface Trap Density near Conduction Band Edge in Ge MIS Structures

N. Taoka¹、W. Mizubayashi¹、Y. Morita¹、S. Migita¹、H. Ota¹、S. Takagi^1,2 (1.MIRAI-AIST(Japan)、2.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2009.B-7-4