[B-8-2] Comprehensive Design Methodology of Extension Profile to Suppress Boron TED in High Performance High-k/Metal SiGe pMOSFETS

C. Y. Kang¹、Y. H. Kim²、M. S. Park³、J. W. Oh¹、B. G. Min⁴、K. S. Lee⁴、S. K. Banerjee²、P. Majhi¹、H. H. Tseng¹、R. Jammy¹ (1.SEMATECH(USA)、2.Univ. of Texas at Austin(USA)、3.POSTECH(Korea)、4.Jusung Engineering(Korea))

https://doi.org/10.7567/SSDM.2009.B-8-2