[B-8-2] Comprehensive Design Methodology of Extension Profile to Suppress Boron TED in High Performance High-k/Metal SiGe pMOSFETS

C. Y. Kang¹, Y. H. Kim², M. S. Park³, J. W. Oh¹, B. G. Min⁴, K. S. Lee⁴, S. K. Banerjee², P. Majhi¹, H. H. Tseng¹, R. Jammy¹ (1.SEMATECH(USA), 2.Univ. of Texas at Austin(USA), 3.POSTECH(Korea), 4.Jusung Engineering(Korea))

https://doi.org/10.7567/SSDM.2009.B-8-2