[B-9-3] Study of Negative V_th Shift in PBTI and Positive Shift in NBTI for Yttrium Doped HfO₂ Gate Dielectrics

M. Sato¹、S. Kamiyama¹、T. Matsuki¹、D. Ishikawa¹、T. Ono¹、T. Morooka¹、J. Yugami¹、K. Ikeda¹、Y. Ohji¹ (1.Selete)

https://doi.org/10.7567/SSDM.2009.B-9-3