[B-9-3] Study of Negative V_th Shift in PBTI and Positive Shift in NBTI for Yttrium Doped HfO₂ Gate Dielectrics

M. Sato¹, S. Kamiyama¹, T. Matsuki¹, D. Ishikawa¹, T. Ono¹, T. Morooka¹, J. Yugami¹, K. Ikeda¹, Y. Ohji¹ (1.Selete)

https://doi.org/10.7567/SSDM.2009.B-9-3