[C-6-2] Sub-30 nm CMOSFET with Ni(Pt)-FUSI/SiON Gate Stack

H. Fukutome¹、K. Okubo¹、S. Akiyama¹、N. Idani¹、H. Ohta¹、K. Kawamura¹、Y. Momiyama¹、S. Satoh¹ (1.Fujitsu Microelectronics Ltd.)

https://doi.org/10.7567/SSDM.2009.C-6-2