[C-6-4] High Performance High-K Metal-Gate Poly-Si TFTs with Subthreshold Swing < 200 mV/dec for Monolithic 3D Integrated Circuits Applications

M. H. Lee¹, K. J. Chen¹, S. C. Weng¹, W. H. Liu¹, M. J. Yang², C. T. Shih³, L. S. Lee³, M. J. Kao³ (1.National Taiwan Normal Univ.(Taiwan), 2.National Nano Device Labs.(Taiwan), 3.Indus. Tech. Res. Inst.(Taiwan))

https://doi.org/10.7567/SSDM.2009.C-6-4