[C-6-5L] Separation of Interface and Bulk traps in Advanced High-k Gate Dielectric MOSFETs from a Low-Leakage Charge Pumping Technique

E. R. Hsieh¹, Y. H. Chu¹, G. D. Lee¹, S. S. Chung¹, W. M. Lin², C. W. Yang², Y. S. Hsieh², L. W. Cheng², C. T. Tsai², G. H. Ma² (1.National Chiao Tung Univ.(Taiwan), 2.UMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.C-6-5L