[C-6-5L] Separation of Interface and Bulk traps in Advanced High-k Gate Dielectric MOSFETs from a Low-Leakage Charge Pumping Technique

E. R. Hsieh¹、Y. H. Chu¹、G. D. Lee¹、S. S. Chung¹、W. M. Lin²、C. W. Yang²、Y. S. Hsieh²、L. W. Cheng²、C. T. Tsai²、G. H. Ma² (1.National Chiao Tung Univ.(Taiwan)、2.UMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.C-6-5L