[C-8-5L] Random-Dopant-Induced Static Noise Margin Fluctuation and Suppression in 16-nm-Gate CMOS SRAM Cell

T. Y. Li¹、C. H. Hwang¹、Y. Li^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Labs.(Taiwan))

https://doi.org/10.7567/SSDM.2009.C-8-5L