[E-3-4L] Characteristic Sensitivity of Multi-Gate and Multi-Fin MOSFETs to Random Dopant Fluctuation and Implication for Digital Circuits

H. W. Cheng¹, C. H. Hwang¹, Y. Li^1,2 (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

https://doi.org/10.7567/SSDM.2009.E-3-4L