[E-4-2L] Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃

D. Marcon^1,2、M. Van Hove¹、D. Visalli^1,2、J. Derluyn¹、J. Das¹、F. Medjdoub¹、S. Degroote¹、M. Leys¹、K. Cheng¹、R. Mertens^1,2、M. Germain¹、G. Borghs^1,2 (1.IMEC(Belgium)、2.Katholieke Universiteit Leuven(Belgium))

https://doi.org/10.7567/SSDM.2009.E-4-2L