[E-4-2L] Excellent stability of GaN-on-Si HEMTs with 5 µm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200℃

D. Marcon^1,2, M. Van Hove¹, D. Visalli^1,2, J. Derluyn¹, J. Das¹, F. Medjdoub¹, S. Degroote¹, M. Leys¹, K. Cheng¹, R. Mertens^1,2, M. Germain¹, G. Borghs^1,2 (1.IMEC(Belgium), 2.Katholieke Universiteit Leuven(Belgium))

https://doi.org/10.7567/SSDM.2009.E-4-2L