RF Characterization and Equivalent Circuit Modeling of Ge Nanowires

J. H. Ahn; M. G. Kang; B. S. Kim; J. Lee; D. H. Hwang; D. J. Lee; H. T. Kim; S. W. Hwang; D. Whang; D. Ahn

doi:https://doi.org/10.7567/SSDM.2009.E-6-4

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[E-6-4] RF Characterization and Equivalent Circuit Modeling of Ge Nanowires

J. H. Ahn¹、M. G. Kang¹、B. S. Kim²、J. Lee²、D. H. Hwang¹、D. J. Lee¹、H. T. Kim¹、S. W. Hwang¹、D. Whang²、D. Ahn³ (1.Korea Univ.(Korea)、2.Sungkyunkwan Univ.(Korea)、3.Univ. of Seoul(Korea))

https://doi.org/10.7567/SSDM.2009.E-6-4

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