[E-7-1] Performance Improvement of Poly-Si Nanowire Transistors Featuring In-Situ Doped Source/Drain

W. C. Chen¹、H. C. Lin^1,2、Y. C. Chang¹、T. Y. Huang¹ (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab. (Taiwan))

https://doi.org/10.7567/SSDM.2009.E-7-1