[F-2-6] Organic Thin Film Transistors with Tailored Liquid Sources of HfO₂ as High-ҡ Insulator

R. Nishizawa¹、S. Naka¹、H. Okada¹、K. Suzuki²、K. Kato² (1.Univ. of Toyama(Japan)、2.AIST(Japan))

https://doi.org/10.7567/SSDM.2009.F-2-6