Seed layer and multistack approaches to reduce leakage in SrTiO<sub>3</sub>-based MIM capacitors using TiN bottom electrode

N. Menou; M. Popovici; K. Opsomer; B. Kaczer; M. A. Pawlak; A. Franquet; C. Detavernier; S. Van Elshocht; D. J. Wouters; S. Biesemans; J. A. Kittl

doi:https://doi.org/10.7567/SSDM.2009.G-1-5

[G-1-5] Seed layer and multistack approaches to reduce leakage in SrTiO₃-based MIM capacitors using TiN bottom electrode

N. Menou¹、M. Popovici¹、K. Opsomer^1,2、B. Kaczer¹、M. A. Pawlak¹、A. Franquet¹、C. Detavernier²、S. Van Elshocht¹、D. J. Wouters¹、S. Biesemans¹、J. A. Kittl¹ (1.IMEC(Belgium)、2.Ghent Univ.(Belgium))

https://doi.org/10.7567/SSDM.2009.G-1-5

2009 International Conference on Solid State Devices and Materials

[G-1-5] Seed layer and multistack approaches to reduce leakage in SrTiO3-based MIM capacitors using TiN bottom electrode

[G-1-5] Seed layer and multistack approaches to reduce leakage in SrTiO₃-based MIM capacitors using TiN bottom electrode