[G-2-3] Study of Transient Tunneling Current and Charge-Trapping Behaviors of SONOS-type Devices using Pulse-IV Technique

P. Y. Du^1,2、H. T. Lue¹、S. Y. Wang¹、T. Y. Huang²、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix Iint'l Co., Ltd.(Taiwan)、2.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.G-2-3