[G-2-3] Study of Transient Tunneling Current and Charge-Trapping Behaviors of SONOS-type Devices using Pulse-IV Technique

P. Y. Du^1,2, H. T. Lue¹, S. Y. Wang¹, T. Y. Huang², K. Y. Hsieh¹, R. Liu¹, C. Y. Lu¹ (1.Macronix Iint'l Co., Ltd.(Taiwan), 2.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.G-2-3