A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized V<sub>TH</sub> at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories

[G-2-7L] A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized V_TH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories

S. Noda¹, T. Hatanaka¹, M. Takahashi², S. Sakai², K. Takeuchi¹ (1.Univ. of Tokyo(Japan), 2.AIST(Japan))