[G-3-1] Direct Measurement of Back-Tunneling Current during Program/Erase Operation of MONOS Memories and Its Dependence on Gate Work Function

J. Fujiki¹、S. Fujii¹、N. Yasuda¹、K. Muraoka¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.G-3-1