[G-3-3] Engineering of Si-rich Nitride Charge-Trapping Layer for Highly Reliable MONOS Type NAND Flash Memory with MLC Operation

R. Fujitsuka¹, K. Sekine¹, A. Sekihara¹, A. Fukumoto¹, J. Fujita¹, F. Aiso¹, Y. Ozawa¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.G-3-3