[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami¹、K. Nishihara²、H. Ishida²、F. Aiso²、T. Iguchi²、D. Ichinose²、A. Fukumoto²、N. Aoki²、M. Kondo²、T. Izumida²、H. Tanimoto²、T. Enda²、T. Suzuki²、I. Mizushima²、F. Arai² (1.Toshiba R&D Center(Japan)、2.Toshiba Advanced Micro-electronics Center(Japan))

https://doi.org/10.7567/SSDM.2009.G-4-1