The Japan Society of Applied Physics

[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami1、K. Nishihara2、H. Ishida2、F. Aiso2、T. Iguchi2、D. Ichinose2、A. Fukumoto2、N. Aoki2、M. Kondo2、T. Izumida2、H. Tanimoto2、T. Enda2、T. Suzuki2、I. Mizushima2、F. Arai2 (1.Toshiba R&D Center(Japan)、2.Toshiba Advanced Micro-electronics Center(Japan))

https://doi.org/10.7567/SSDM.2009.G-4-1