Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami; K. Nishihara; H. Ishida; F. Aiso; T. Iguchi; D. Ichinose; A. Fukumoto; N. Aoki; M. Kondo; T. Izumida; H. Tanimoto; T. Enda; T. Suzuki; I. Mizushima; F. Arai

doi:https://doi.org/10.7567/SSDM.2009.G-4-1

[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory

M. Mizukami¹, K. Nishihara², H. Ishida², F. Aiso², T. Iguchi², D. Ichinose², A. Fukumoto², N. Aoki², M. Kondo², T. Izumida², H. Tanimoto², T. Enda², T. Suzuki², I. Mizushima², F. Arai² (1.Toshiba R&D Center(Japan), 2.Toshiba Advanced Micro-electronics Center(Japan))

https://doi.org/10.7567/SSDM.2009.G-4-1

2009 International Conference on Solid State Devices and Materials

[G-4-1] Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory