[G-8-5] MIS Diode Characterization on n-GaN by C-V Measurement at 150 ℃

C. Y. Hu¹、H. Nokubo¹、M. Okada¹、J. P. Ao¹、Y. Ohno¹ (1.Univ. of Tokushima)

https://doi.org/10.7567/SSDM.2009.G-8-5