[G-8-6] Low Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

N. Yafune^1,3、M. Nagamori²、F. Watanabe²、K. Sakuno¹、M. Kuzuhara² (1.Sharp Corp.(Japan)、2.Univ. of Fukui(Japan)、3.JRCM(Japan))

https://doi.org/10.7567/SSDM.2009.G-8-6