[H-1-4] Formation of High Ge Concentration Virtual Substrate by Laser Annealing

C. Y. Ong¹, K. L. Pey¹, J. P. Liu², Q. Wang², C. P. Wong¹, Z. X. Shen¹, X. C. Wang³, H. Zheng³, C. M. Ng², L. Chan² (1.Nanyang Technological Univ(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore), 3.Singapore Inst. Of Manufacturing Tech.(Singapore))

https://doi.org/10.7567/SSDM.2009.H-1-4