[H-1-4] Formation of High Ge Concentration Virtual Substrate by Laser Annealing

C. Y. Ong¹、K. L. Pey¹、J. P. Liu²、Q. Wang²、C. P. Wong¹、Z. X. Shen¹、X. C. Wang³、H. Zheng³、C. M. Ng²、L. Chan² (1.Nanyang Technological Univ(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Singapore Inst. Of Manufacturing Tech.(Singapore))

https://doi.org/10.7567/SSDM.2009.H-1-4