The Japan Society of Applied Physics

[H-1-4] Formation of High Ge Concentration Virtual Substrate by Laser Annealing

C. Y. Ong1、K. L. Pey1、J. P. Liu2、Q. Wang2、C. P. Wong1、Z. X. Shen1、X. C. Wang3、H. Zheng3、C. M. Ng2、L. Chan2 (1.Nanyang Technological Univ(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Singapore Inst. Of Manufacturing Tech.(Singapore))

https://doi.org/10.7567/SSDM.2009.H-1-4