The Japan Society of Applied Physics

[H-1-6] Low-dislocation-density 50nm Ge Fin Fabrication on Si substrate

C. T. Chung1、S. C. Huang2、G. L. Luo2、C. H. Ko3、C. H. Wann3、H. Y. Lin3、Z. Y. Han1、C. C. Cheng1、C. H. Chien1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.TSMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.H-1-6