[H-6-2] Analysis of Hot Carrier Degradation for LDMOS under Gate Pulse Stress

K. Furuya¹、T. Nitta²、T. Katayama¹、K. Hatasako²、T. Kuroi²、S. Maegawa² (1.Renesas Semiconductor Eng. Corp.(Japan)、2.Renesas Tech. Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.H-6-2