[H-6-2] Analysis of Hot Carrier Degradation for LDMOS under Gate Pulse Stress

K. Furuya¹, T. Nitta², T. Katayama¹, K. Hatasako², T. Kuroi², S. Maegawa² (1.Renesas Semiconductor Eng. Corp.(Japan), 2.Renesas Tech. Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.H-6-2