[I-4-2] Fabrication of InAs Nanowire Vertical Surrounding-Gate Field Effect Transistor on Si Substrates

T. Tanaka¹, K. Tomioka¹, J. Motohisa¹, S. Hara¹, T. Fukui¹ (1.Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2009.I-4-2