[J-1-5] Evaluation of GaN MOSFET with TEOS SiO₂ Gate Insulator

K. Nakatani¹、J. P. Ao¹、K. Ohmuro¹、M. Sugimoto²、C. Y. Hu¹、Y. Sogawa¹、Y. Ohno¹ (1.Univ. of Tokushima(Japan)、2.Toyota Motor Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.J-1-5