[J-1-5] Evaluation of GaN MOSFET with TEOS SiO₂ Gate Insulator

K. Nakatani¹, J. P. Ao¹, K. Ohmuro¹, M. Sugimoto², C. Y. Hu¹, Y. Sogawa¹, Y. Ohno¹ (1.Univ. of Tokushima(Japan), 2.Toyota Motor Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.J-1-5