The Japan Society of Applied Physics

[J-2-2] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region

T. Kanazawa1, H. Saito1, K. Wakabayashi1, T. Tajima1, R. Terao1, Y. Miyamoto1, K. Furuya1 (1.Tokyo Tech)

https://doi.org/10.7567/SSDM.2009.J-2-2