[J-2-2] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N⁺-InGaAs Source Region

T. Kanazawa¹、H. Saito¹、K. Wakabayashi¹、T. Tajima¹、R. Terao¹、Y. Miyamoto¹、K. Furuya¹ (1.Tokyo Tech)

https://doi.org/10.7567/SSDM.2009.J-2-2