Heteroepitaxy of Si<sub>x</sub>Ge<sub>1-x</sub> (x &lt; 5%) Source/Drain on GaAs Substrates

Z. Y. Han; G. L. Luo; S. C. Huang; C. H. Ko; C. H. Wann; H. Y. Lin; C. T. Chung; C. C. Cheng; C. Y. Chang; C. H. Chien

doi:https://doi.org/10.7567/SSDM.2009.J-2-3

[J-2-3] Heteroepitaxy of Si_xGe_1-x (x < 5%) Source/Drain on GaAs Substrates

Z. Y. Han¹、G. L. Luo²、S. C. Huang²、C. H. Ko³、C. H. Wann³、H. Y. Lin³、C. T. Chung¹、C. C. Cheng¹、C. Y. Chang¹、C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.Taiwan Semiconductor Manufac. Co., Ltd.(Taiwan))

https://doi.org/10.7567/SSDM.2009.J-2-3

2009 International Conference on Solid State Devices and Materials

[J-2-3] Heteroepitaxy of SixGe1-x (x < 5%) Source/Drain on GaAs Substrates

[J-2-3] Heteroepitaxy of Si_xGe_1-x (x < 5%) Source/Drain on GaAs Substrates