[J-2-3] Heteroepitaxy of Si_xGe_1-x (x < 5%) Source/Drain on GaAs Substrates

Z. Y. Han¹, G. L. Luo², S. C. Huang², C. H. Ko³, C. H. Wann³, H. Y. Lin³, C. T. Chung¹, C. C. Cheng¹, C. Y. Chang¹, C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Lab.(Taiwan), 3.Taiwan Semiconductor Manufac. Co., Ltd.(Taiwan))

https://doi.org/10.7567/SSDM.2009.J-2-3