The Japan Society of Applied Physics

[J-2-3] Heteroepitaxy of SixGe1-x (x < 5%) Source/Drain on GaAs Substrates

Z. Y. Han1、G. L. Luo2、S. C. Huang2、C. H. Ko3、C. H. Wann3、H. Y. Lin3、C. T. Chung1、C. C. Cheng1、C. Y. Chang1、C. H. Chien1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.Taiwan Semiconductor Manufac. Co., Ltd.(Taiwan))

https://doi.org/10.7567/SSDM.2009.J-2-3